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IPB070N06NG  

Infineon Technologies
Infineon Technologies

IPB070N06NG

Power-Transistor

IPB070N06N G IPP070N06N G OptiMOS® Power-Transistor Features • Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, Ro




관련 부품 IPB070N06 상세설명

IPB070N06LG  

  
Power-Transistor

IPB070N06L G IPP070N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R



Infineon Technologies
Infineon Technologies

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