IPB042N10N3G
Infineon Technologies
Power-TransistorIPB042N10N3 G IPI045N10N3 G IPP045N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO 263) ID
100 V 4.2 mW 100 A