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Datasheet IDT74FCT245AP Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IDT74FCT245AP | FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS ®
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS
DESCRIPTION:
IDT54/74FCT245/A/C IDT54/74FCT640/A/C IDT54/74FCT645/A/C
Integrated Device Technology, Inc.
FEATURES:
• IDT54/74FCT245/640/645 equivalent to FAST™ speed and drive • IDT54/74FCT245A/640A/645A 25% faster than FAST • IDT54/74FCT245C |  Integrated Device Tech | transceiver |
| 2 | IDT74FCT245APB | 3.3V CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS ®
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS
DESCRIPTION:
IDT54/74FCT245/A/C IDT54/74FCT640/A/C IDT54/74FCT645/A/C
Integrated Device Technology, Inc.
FEATURES:
• IDT54/74FCT245/640/645 equivalent to FAST™ speed and drive • IDT54/74FCT245A/640A/645A 25% faster than FAST • IDT54/74FCT245C | Integrated Device Tech | transceiver |
| 3 | IDT74FCT245APY | 3.3V CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS 3.3V CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS
Integrated Device Technology, Inc.
IDT54/74FCT3245/A
FEATURES:
• 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • 25 mil Center SSOP and QSOP Packages • Extended commercial rang | Integrated Device Tech | transceiver |
| 4 | IDT74FCT245APYB | 3.3V CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS 3.3V CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS
Integrated Device Technology, Inc.
IDT54/74FCT3245/A
FEATURES:
• 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • 25 mil Center SSOP and QSOP Packages • Extended commercial rang | Integrated Device Tech | transceiver |
IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IDT02S60C | Schottky Diode IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica  Infineon Technologies diode | | |
| 2 | IDT03S60C | Schottky Diode IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica Infineon Technologies diode | | |
| 3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current cap  Infineon Technologies AG diode | | |
| 4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current c Infineon Technologies AG diode | | |
| 5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
| 6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
| 7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K IDT cmos | |
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