IDT74ALVC08PY
Integrated Device Tech
3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATEIDT74ALVC08 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE
INDUSTRIAL TEMPERATURE RANGE
3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE
IDT74ALVC08
• 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 20
IDT74ALVC08PG
3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATEIDT74ALVC08 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE
INDUSTRIAL TEMPERATURE RANGE
3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE
IDT74ALVC08
• 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ± 0.3V, Norm
Integrated Device Tech
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IDT74ALVC08DC
3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATEIDT74ALVC08 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE
INDUSTRIAL TEMPERATURE RANGE
3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE
IDT74ALVC08
• 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ± 0.3V, Norm
Integrated Device Tech
PDF
IDT74ALVC08
3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATEIDT74ALVC08 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE
INDUSTRIAL TEMPERATURE RANGE
3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE
IDT74ALVC08
• 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ± 0.3V, Norm
Integrated Device Tech
PDF