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Datasheet IDT71V428S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IDT71V428S | CMOS Static RAM
3.3V CMOS Static RAM 4 Meg (1M x 4-Bit)
IDT71V428S IDT71V428L
Features
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Description
The IDT71V428 is a 4,194,304-bit high-speed Static RAM organized as 1M x 4. It is fabricated using IDT’s high-perfomance, highreliability CMOS technology. This state-of-the-art te |  IDT | cmos |
| 2 | IDT71V428S12Y | 3.3V CMOS STATIC RAM 4 MEG (1M x 4-BIT) 3.3V CMOS STATIC RAM 4 MEG (1M x 4-BIT)
Integrated Device Technology, Inc.
ADVANCE INFORMATION IDT71V428
FEATURES:
• 1M x 4 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times — 12/15/20ns • Single 3.3V power supply • O |  Integrated Device Technology | cmos |
| 3 | IDT71V428S15Y | 3.3V CMOS STATIC RAM 4 MEG (1M x 4-BIT) 3.3V CMOS STATIC RAM 4 MEG (1M x 4-BIT)
Integrated Device Technology, Inc.
ADVANCE INFORMATION IDT71V428
FEATURES:
• 1M x 4 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times — 12/15/20ns • Single 3.3V power supply • O | Integrated Device Technology | cmos |
| 4 | IDT71V428S20Y | 3.3V CMOS STATIC RAM 4 MEG (1M x 4-BIT) 3.3V CMOS STATIC RAM 4 MEG (1M x 4-BIT)
Integrated Device Technology, Inc.
ADVANCE INFORMATION IDT71V428
FEATURES:
• 1M x 4 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times — 12/15/20ns • Single 3.3V power supply • O | Integrated Device Technology | cmos |
IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IDT02S60C | Schottky Diode IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica  Infineon Technologies diode | | |
| 2 | IDT03S60C | Schottky Diode IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica Infineon Technologies diode | | |
| 3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current cap  Infineon Technologies AG diode | | |
| 4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current c Infineon Technologies AG diode | | |
| 5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
| 6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
| 7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K IDT cmos | |
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