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Datasheet IDT54FCT574C Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | IDT54FCT574C | FAST CMOS OCTAL D REGISTERS (3-STATE) ®
FAST CMOS OCTAL D REGISTERS (3-STATE)
IDT54/74FCT374/A/C IDT54/74FCT534/A/C IDT54/74FCT574/A/C
Integrated Device Technology, Inc.
FEATURES:
• IDT54/74FCT374/534/574 equivalent to FAST™ speed and drive • IDT54/74FCT374A/534A/574A up to 30% faster than FAST • IDT54/74FCT374C/534C/574C u | Integrated Device | cmos |
2 | IDT54FCT574CT | FAST CMOS OCTAL D REGISTERS (3-STATE) FAST CMOS OCTAL D REGISTERS (3-STATE)
Integrated Device Technology, Inc.
IDT54/74FCT374T/AT/CT/DT - 2374T/AT/CT IDT54/74FCT534T/AT/CT IDT54/74FCT574T/AT/CT/DT - 2574T/AT/CT
FEATURES:
• Common features: – Low input and output leakage ≤1µA (max.) – CMOS power levels – True TTL input and o | Integrated Device | cmos |
IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | IDT02S60C | Schottky Diode IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica Infineon Technologies diode | | |
2 | IDT03S60C | Schottky Diode IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica Infineon Technologies diode | | |
3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current cap Infineon Technologies AG diode | | |
4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current c Infineon Technologies AG diode | | |
5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K IDT cmos | |
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Número de pieza | Descripción | Fabricantes | |
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