IDC04S60CE
Infineon Technologies
Schottky DiodeIDC04S60CE
2nd generation thinQ!TM SiC Schottky Diode
Features: Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery www.Dat
IDC04S60C
2nd generation thinQ! SiC Schottky Diode
IDC04S60C
2nd generation thinQ!TM SiC Schottky Diode
FEATURES: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current
Infineon Technologies
PDF