ICE20N170B
Icemos
N-Channel Enhancement Mode MOSFETPreliminary Data Sheet
ICE20N170B ICE20N170B N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased
ICE20N170B
Micross Components
N-Channel Enhancement Mode MOSFETICE20N170B
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design