Datasheet ICE10N60FP Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	ICE10N60FP	N-Channel Enhancement Mode MOSFET ICE10N60FP N-Channel Enhancement Mode MOSFET ID V(BR)DSS rDS(ON) Qg Product Summary TA = 25°C ID = 250uA VGS = 10V VDS = 480V 10A 600V 0.28Ω 41nC Max Min Typ Typ Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability Hi	Micross Components

ICE10N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
ICE10N65FP	N-Channel Enhancement Mode MOSFET ICE10N65FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performanc	Micross Components
ICE10N65	N-Channel Enhancement Mode MOSFET ICE10N65 ICE10N65 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized desi	Icemos
ICE10N65	N-Channel Enhancement Mode MOSFET ICE10N65 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance	Micross Components

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Número de pieza	Descripción	Fabricantes	PDF
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