Datasheet HY4903B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HY4903B	N-Channel Enhancement Mode MOSFET HY4903P/B N-Channel Enhancement Mode MOSFET Features • 30V/290A RDS(ON)= 1.6mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench technology • Halogen - Free Device Available Pin Description DS G TO-2	HOOYI

HY49 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HY4903B	N-Channel Enhancement Mode MOSFET HY4903P/B N-Channel Enhancement Mode MOSFET Features • 30V/290A RDS(ON)= 1.6mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench technology • Halogen - Free Device Available Pin De	HOOYI
HY4903P	N-Channel Enhancement Mode MOSFET HY4903P/B N-Channel Enhancement Mode MOSFET Features • 30V/290A RDS(ON)= 1.6mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench technology • Halogen - Free Device Available Pin De	HOOYI

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Número de pieza	Descripción	Fabricantes	PDF
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