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Datasheet HUF75339G3 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | HUF75339G3 | 75A/ 55V/ 0.012 Ohm/ N-Channel UltraFET Power MOSFETs This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Mater | Fairchild Semiconductor | mosfet |
2 | HUF75339G3 | 75A/ 55V/ 0.012 Ohm/ N-Channel UltraFET Power MOSFETs HUF75339G3, HUF75339P3, HUF75339S3S
Data Sheet June 1999 File Number
4363.5
75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per | Intersil Corporation | mosfet |
HUF Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | HUF75229P3 | 44A/ 50V/ 0.022 Ohm/ N-Channel UltraFET Power MOSFET HUF75229P3
Data Sheet December 2001
44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding perfor Fairchild Semiconductor mosfet | | |
2 | HUF75229P3 | 44A/ 50V/ 0.022 Ohm/ N-Channel UltraFET Power MOSFET HUF75229P3
Data Sheet June 1998 File Number 4536.1
44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in ou Intersil Corporation mosfet | | |
3 | HUF75307D3 | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet December 2001
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re Fairchild Semiconductor mosfet | | |
4 | HUF75307D3 | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet June 1999 File Number
4353.6
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per Intersil Corporation mosfet | | |
5 | HUF75307D3S | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet December 2001
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re Fairchild Semiconductor mosfet | | |
6 | HUF75307D3S | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet June 1999 File Number
4353.6
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per Intersil Corporation mosfet | | |
7 | HUF75307P3 | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet December 2001
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re Fairchild Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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