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Datasheet HUF75309D3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | HUF75309D3 | 19A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307T3ST
Data Sheet December 2001
2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding per |
 Intersil Corporation |
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| 3 | HUF75309D3 | 19A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFETs HUF75309P3, HUF75309D3, HUF75309D3S
Data Sheet June 1999 File Number
4358.5
19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per |
 Fairchild Semiconductor |
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| 2 | HUF75309D3S | 19A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFETs HUF75309P3, HUF75309D3, HUF75309D3S
Data Sheet December 2001
19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re |
Fairchild Semiconductor |
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| 1 | HUF75309D3S | 19A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFETs HUF75309P3, HUF75309D3, HUF75309D3S
Data Sheet December 2001
19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re |
Intersil Corporation |
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