Datasheet HN7G08FE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HN7G08FE	General-Purpose Amplifier Applications HN7G08FE TOSHIBA Multichip Discrete Device HN7G08FE Unit: mm General-Purpose Amplifier Applications Switching and Muting Switch Applications Q1 Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA Large collector current: IC = −400 mA (max) Q	Toshiba Semiconductor

HN7G0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HN7G01FU	Power Management Switch Application HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Unit: mm Power Management Switch Application Driver Circuit Application Interface Circuit Application • • Q1 (transistor): 2SA1955 equivalent Q2 (MOS-FET): 2SK1830 equivalent Q1 (transis	Toshiba Semiconductor
HN7G03FU	Power Management Switch Applications HN7G03FU TOSHIBA Multichip Discrete Device HN7G03FU Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 (transistor) Q2 (S-MOS) : 2SA1955 equivalent : SSM3K04FU equivalent Q1 Absolute Maximum Ratings	Toshiba Semiconductor
HN7G06FU	Power Management Switch Applications HN7G06FU TOSHIBA Multichip Discrete Device HN7G06FU Unit: mm • Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications • Combining transistor and BRT reduces the parts count, ena	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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