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HMC7590 전자부품 데이터시트



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HMC7590  

Hittite
Hittite

HMC7590

43 Gbps Transimpedance Amplifier

HMC7590 43 Gbps Transimpedance Amplifier Product Details Request Data Sheet ECCN: EAR99 Quality & Reliability Qualification Test Reports Waffle-Pak & Gel-Pak Press & Media Product Press Release Life Cycle Status Production, Recommended for New Designs Dat




관련 부품 HMC75 상세설명

HMC758LP3  

  
GaAs SMT PHEMT LOW NOISE AMPLIFIER

HMC758LP3 / 758LP3E v00.1108 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Features Noise Figure: 1.7 dB Gain: 22 dB Output IP3: +37 dBm Single Supply: +3V to +5V 50 Ohm Matched Input/Output 16 Lead 3x3 mm SMT Package: 9 mm2 8 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC758LP3(E)



Hittite Microwave Corporation
Hittite Microwave Corporation

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HMC7587  

  
81 GHz to 86 GHz E-Band I/Q Downconverter

Data Sheet FEATURES Conversion gain: 10 dB typical Image rejection: 30 dBc typical Noise figure: 6 dB typical Input power for 1 dB compression (P1dB): −10 dBm typical Input third-order intercept (IP3): −2 dBm typical Input second-order intercept (IP2): 25 dBm typical 6× LO leakage at RFIN: −4



Analog Devices
Analog Devices

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HMC7586  

  
E-Band I/Q Downconverter

Data Sheet 71 GHz to 76 GHz, E-Band I/Q Downconverter HMC7586 FEATURES GENERAL DESCRIPTION Conversion gain: 12.5 dB typical Image rejection: 28 dBc typical Noise figure: 5 dB typical Input power for 1 dB compression (P1dB): −9 dBm typical Input third-order intercept (IP3): −1 dBm typical Inp



Analog Devices
Analog Devices

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HMC757  

  
GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER

HMC757 v00.0409 GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz Typical Applications The HMC757 is ideal for: • Point-to-Point Radios Features Saturated Output Power: +30 dBm @ 30% PAE High Output IP3: +37 dBm High Gain: 22 dB DC Supply: +7V @ 395 mA 50 Ohm Matched Input/Output Die Size:



Hittite Microwave Corporation
Hittite Microwave Corporation

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HMC755LP4E  

  
GaAs MMIC 1 Watt Power Amplifier

HMC755LP4E v01.0410 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Typical Applications The HMC755LP4E is Ideal for: • Cellular/3G & LTE/4G • WiMAX, WiBro & Fixed Wireless • Military & SATCOM Features High Gain: 31 dB High PAE: 28% @ +33 dBm Pout Low EVM: 2.5% @ Pout =



Hittite Microwave
Hittite Microwave

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HMC754S8GE  

  
GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER

HMC754S8GE v00.0409 GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz Features Output IP2: +78 dBm High Gain: 14.5 dB High Output IP3: +38 dBm 75 Ohm Impedance Single Positive Supply: +5V Robust 1000V ESD, Class 1C SOIC-8 SMT Package Typical Applications 9 DRIVER & GAIN BLOCK AMPLIF



Hittite Microwave Corporation
Hittite Microwave Corporation

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