|
HMC758LP3 / 758LP3E v00.1108 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Features Noise Figure: 1.7 dB Gain: 22 dB Output IP3: +37 dBm Single Supply: +3V to +5V 50 Ohm Matched Input/Output 16 Lead 3x3 mm SMT Package: 9 mm2 8 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC758LP3(E)
Data Sheet FEATURES Conversion gain: 10 dB typical Image rejection: 30 dBc typical Noise figure: 6 dB typical Input power for 1 dB compression (P1dB): −10 dBm typical Input third-order intercept (IP3): −2 dBm typical Input second-order intercept (IP2): 25 dBm typical 6× LO leakage at RFIN: −4
Data Sheet 71 GHz to 76 GHz, E-Band I/Q Downconverter HMC7586 FEATURES GENERAL DESCRIPTION Conversion gain: 12.5 dB typical Image rejection: 28 dBc typical Noise figure: 5 dB typical Input power for 1 dB compression (P1dB): −9 dBm typical Input third-order intercept (IP3): −1 dBm typical Inp
HMC757 v00.0409 GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz Typical Applications The HMC757 is ideal for: • Point-to-Point Radios Features Saturated Output Power: +30 dBm @ 30% PAE High Output IP3: +37 dBm High Gain: 22 dB DC Supply: +7V @ 395 mA 50 Ohm Matched Input/Output Die Size:
HMC755LP4E v01.0410 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Typical Applications The HMC755LP4E is Ideal for: • Cellular/3G & LTE/4G • WiMAX, WiBro & Fixed Wireless • Military & SATCOM Features High Gain: 31 dB High PAE: 28% @ +33 dBm Pout Low EVM: 2.5% @ Pout =
HMC754S8GE v00.0409 GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz Features Output IP2: +78 dBm High Gain: 14.5 dB High Output IP3: +38 dBm 75 Ohm Impedance Single Positive Supply: +5V Robust 1000V ESD, Class 1C SOIC-8 SMT Package Typical Applications 9 DRIVER & GAIN BLOCK AMPLIF
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |