HM76
Bi technologies
Space Efficient High Performance Surface Mount InductorsElectrical / Environmental
St H o R lian Comp
Drum Core, Space Efficient High Performance Surface Mount Inductors
• • • • Operating Temperature Range Ambient Temperature, Maximum Insulation System Temperature Rise, Maximum
Schematic B
1 3
HM-6516-883
2K x 8 CMOS RAMTM HM-6516/883
March 1997
2K x 8 CMOS RAM
Features
Description
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
• Low Power Standby. . . . . . . . . . . . . . . . . . . 275µW Max • Low Power Operation . . . . . . . .
Intersil Corporation
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HM-6561883
256 x 4 CMOS RAMHM-6561/883
March 1997
256 x 4 CMOS RAM
Description
The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. On-chip latches are provided for address an
Intersil Corporation
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HM-65642883
8K x 8 Asynchronous CMOS Static RAMHM-65642/883
March 1997
8K x 8 Asynchronous CMOS Static RAM
Description
The HM-65642/883 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which accommodate a variety of industry standard ROM, PROM, EPROM,
Intersil Corporation
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