HITK0302MP
Renesas
Silicon N Channel MOS FET Power SwitchingPreliminary Datasheet
HITK0302MP
Silicon N Channel MOS FET Power Switching
Features
Low on-resistance RDS(on) = 92 m typ (VGS = 10 V, ID = 1.3 A) Low drive current High speed switching 4.5 V gate drive R07DS0483EJ0100 Rev.1.00 Jun 22, 2011