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Datasheet HGTG30N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | HGTG30N60 | 600V Planar IGBT Chip 600V Planar IGBT Chip
600V, 60A, VCE(sat) = 1.8V
HGTG30N60
Part HGTG30N60
VCES 600V
ICn 60A
VCE (sat) Typ 1.8
Die Size 6.6 x 6.6 mm2
See page 2 for ordering part numbers & supply formats
Applications
Features
• AC & DC Motor Controls
• Fast Switching & Low Conduction Loss
• General |
 Fairchild Semiconductor |
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| 11 | HGTG30N60A4 | 600V/ SMPS Series N-Channel IGBT HGTG30N60A4
Data Sheet August 2003 File Number 4829
600V, SMPS Series N-Channel IGBT
The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss |
Fairchild Semiconductor |
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| 10 | HGTG30N60A4 | 600V/ SMPS Series N-Channel IGBT HGTG30N60A4
Data Sheet January 2000 File Number 4829
600V, SMPS Series N-Channel IGBT
The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction los |
 Intersil Corporation |
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| 9 | HGTG30N60A4D | 600V/ SMPS Series N-Channel IGBT with HGTG30N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low o |
Fairchild Semiconductor |
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