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Datasheet HGTG20N120 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | HGTG20N120 | 34A/ 1200V N-Channel IGBT Semiconductor
HGTG20N120E2
34A, 1200V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL)
April 1995
Features
• 34A, 1200V • Latch Free Operation • Typical Fall Time - 780ns • High Input Impedance • Low Conduction Loss
Description
The HGTG20N1 |
Intersil Corporation |
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4 | HGTG20N120C3D | 45A/ 1200V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG20N120C3D
Data Sheet October 1998 File Number
4508.1
45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance o |
Intersil Corporation |
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3 | HGTG20N120CN | 63A/ 1200V/ NPT Series N-Channel IGBT HGTG20N120CN
Data Sheet January 2000 File Number 4533.2
63A, 1200V, NPT Series N-Channel IGBT
The HGTG20N120CN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This |
Intersil Corporation |
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2 | HGTG20N120CND | 63A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG20N120CND
Data Sheet January 2000 File Number 4535.2
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of |
Intersil Corporation |
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Número de pieza | Descripción | Fabricantes | |
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