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Datasheet HGTG12N60B3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | HGTG12N60B3 | 27A/ 600V/ UFS Series N-Channel IGBTs HGTG12N60B3
Data Sheet August 2003
27A, 600V, UFS Series N-Channel IGBTs
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar tr |
 Fairchild Semiconductor |
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| 2 | HGTG12N60B3D | 27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
Data Sheet December 2001
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impeda |
Fairchild Semiconductor |
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| 1 | HGTG12N60B3D | 27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
Data Sheet January 2000 File Number 4411.2
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the |
 Intersil Corporation |
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