HGTD8P50G1
Intersil Corporation
8A/ 500V P-Channel IGBTsHGTD8P50G1, HGTD8P50G1S
March 1997
8A, 500V P-Channel IGBTs
Package
JEDEC TO-251AA
EMITTER COLLECTOR GATE
Features
• 8A, 500V • 3.7V VCE(SAT) • Typical Fall Time - 1800ns • High Input Impedance • TJ = +150oC
(FLANGE) COLLECTOR
Description
The HGT
HGTD8P50G1S
Intersil Corporation
8A/ 500V P-Channel IGBTsHGTD8P50G1, HGTD8P50G1S
March 1997
8A, 500V P-Channel IGBTs
Package
JEDEC TO-251AA
EMITTER COLLECTOR GATE
Features
• 8A, 500V • 3.7V VCE(SAT) • Typical Fall Time - 1800ns • High Input Impedance • TJ = +150oC
(FLANGE) COLLECTOR
Description
The HGT