Datasheet HFW10N60S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HFW10N60S	N-Channel MOSFET HFW10N60S May 2010 HFW10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 9.5 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gat	SemiHow

HFW10N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HFW10N60U	N-Channel MOSFET HFW10N60U_HFI10N60U HFW10N60U / HFI10N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC	SemiHow
HFW10N60S	N-Channel MOSFET HFW10N60S May 2010 HFW10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 9.5 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristi	SemiHow
HFW10N65S	N-Channel MOSFET HFW10N65S July 2016 HFW10N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 9.2 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characterist	SemiHow

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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