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HFD5N70U_HFU5N70U HFD5N70U / HFU5N70U 700V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf
HFD5N70S_HFU5N70S Jan 2013 HFD5N70S / HFU5N70S 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ ȍ ID = 3.8 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics
HFD5N65U_HFU5N65U HFD5N65U / HFU5N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf
HFD5N65S_HFU5N65S Mar 2010 HFD5N65S / HFU5N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 2.3 ȍ ID = 4.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics
HFD5N60U_HFU5N60U HFD5N60U / HFU5N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf
HFD5N60S_HFU5N60S Sep 2009 HFD5N60S / HFU5N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 2.0 ȍ ID = 4.3 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics
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