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Datasheet HFT1N60F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HFT1N60F | N-Channel MOSFET HFT1N60F
May 2015
HFT1N60F
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 1 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Cha |  SemiHow | mosfet |
HFT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HFT012 | 12-bit SAR type Analog-to-Digital converter www.DataSheet4U.net
KING BILLION ELECTRONICS CO., LTD 駿 億 電 子 股 份 有 限 公 司 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11.
HFT012
Table of Contents -
General Description ___________________________________________________________________2 Features __________________________________________  Kingbright Corporation converter | | |
| 2 | HFT150-28 | NPN SILICON RF POWER TRANSISTOR www.DataSheet4U.net
HFT150-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HFT150-28 is Designed for
.112x45° A L
PACKAGE STYLE .500 4L FLG
FEATURES:
• PG = 16 dB min. at 150 W/30 MHz • IMD3 = -28 dBc max. at 150 W (PEP) • Omnigold™ Metalization System
FULL R
Ø.125 NOM.
C B
 ASI transistor | | |
| 3 | HFT150-50 | N-Channel Enhancement Mode HF POWER MOSFET www.DataSheet4U.net
HFT150-50
HF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The HFT150-50 is Designed for General Purpose Class B Power Amplifier Applications Up to 100 MHz.
PACKAGE STYLE .500 4L FLG
.112x45° A L
FEATURES:
• PG = 20 dB Typ. at 150 W/30 MHz • η D = 50% Typical at ASI mosfet | | |
| 4 | HFT1N60F | N-Channel MOSFET HFT1N60F
May 2015
HFT1N60F
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 1 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Cha SemiHow mosfet | | |
| 5 | HFT1N60S | N-Channel MOSFET HFT1N60S
Dec 2009
HFT1N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 0.2 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Ch SemiHow mosfet | | |
| 6 | HFTC-16 | Ceramic High Pass Filter 1900 to 2700 MHz Ceramic
High Pass Filter
1900 to 2700 MHz
Maximum Ratings
Operating Temperature Storage Temperature -55°C to 100°C -55°C to 125°C
! NEW
HFTC-16
Features
• • • • miniature size, 0.15"X0.15"X.028" low profile, .028" height low pass band insertion loss, 1.0 dB typ. high power handling,  Mini-Circuits filter | | |
| 7 | HFTC-19 | Ceramic High Pass Filter 2300 to 5500 MHz Ceramic
High Pass Filter
2300 to 5500 MHz
Maximum Ratings
Operating Temperature Storage Temperature -55°C to 100°C -55°C to 125°C
! NEW
HFTC-19
Features
• • • • miniature size, 0.15"X0.15"X.028" low profile, .028" height low pass band insertion loss, 1.0 dB typ. high power handling, Mini-Circuits filter | |
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| Número de pieza | Descripción | Fabricantes | |
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