HFP7N80
HUASHAN ELECTRONIC
N-Channel Enhancement Mode Field Effect TransistorShantou Huashan Electronic Devices Co., Ltd.
HFP7N80
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this
HFP7N80
SemiHow
N-Channel MOSFETHFP7N80
June 2005
HFP7N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 1.55 ȍ ID = 7.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switch