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Datasheet HFP630 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | HFP630 | N-Channel Enhancement Mode Field Effect Transistor Tstg Tj VD S S VDGR VG S ID PD
Ta=25
(RGS=1M ) Tc=25
T c =25
Ta=25
N-Channel Enhancement Mode Field Effect Transistor
HFP630
TO-220
55~150 55~150
200V 500V
±3 0 V
9 . 0A 72W
1G 2D 3S
µ ±
µ
±3 µ
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 Shantou Huashan |
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| 2 | HFP630 | 200V N-Channel MOSFET HFP630
July 2005
HFP630
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ = 0.34 ȍ ID = 9 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charg |
 SemiHow |
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| 1 | HFP630A | 200V N-Channel MOSFET HFP630A
Jan 2016
HFP630A
200V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 12 nC (Typ.) Extended Safe Operating Ar |
SemiHow |
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