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Datasheet HFP4N65 Equivalent ( PDF ) |
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2 | HFP4N65 | N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co., Ltd.
HFP4N65
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially |
HUASHAN ELECTRONIC |
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1 | HFP4N65 | N-Channel MOSFET HFP4N65
April 2006
HFP4N65
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 2.3 Ω ID = 3.6 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled |
SemiHow |
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