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HFP2N65U HFP2N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area L
HFP2N65 July 2007 HFP2N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 4.5 Ω ID = 1.8 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled G
HFP2N65S Sep 2009 HFP2N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 5.0 Ω ID = 1.8 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled
HFP2N60U HFP2N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area L
HFP2N60 June 2005 HFP2N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 2.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Ch
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