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Datasheet HFP13N50 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | HFP13N50 | N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co.,Ltd.
HFP13N50
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially |
HUASHAN ELECTRONIC |
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2 | HFP13N50S | N-Channel MOSFET HFP13N50S
March 2014
HFP13N50S
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ ȍ ID = 13 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Ga |
SemiHow |
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1 | HFP13N50U | N-Channel MOSFET HFP13N50U
HFP13N50U
500V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 34 nC (Typ.) Extended Safe Operating Area |
SemiHow |
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Sanken |
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