HFH9N90
HUASHAN ELECTRONIC
N-Channel Enhancement Mode Field Effect TransistorShantou Huashan Electronic Devices Co.,Ltd.
HFH9N90
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this a
HFH9N90
SemiHow
N-Channel MOSFETHFH9N90
Apr 2009
HFH9N90
900V N-Channel MOSFET
BVDSS = 900 V RDS(on) typ = 1.12 Ω ID = 9.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Sw