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HFD1N65S / HFU1N65S HFD1N65S / HFU1N65S 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ.) Exte
HFD1N60F_HFU1N60F Sep 2015 HFD1N60F / HFU1N60F 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics
HFD1N60_HFU1N60 Dec 2005 HFD1N60 / HFU1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.9 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics U
HFD1N65 / HFU1N65 April 2006 HFD1N65 / HFU1N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.8 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Character
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PartNumber.co.kr | 2020 | 연락처 |