Datasheet HF75-28S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HF75-28S	NPN SILICON RF POWER TRANSISTOR HF75-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF75-28S is Designed for PACKAGE STYLE .380 STUD .112x45° A B C E ØC FEATURES: • PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System E B H I J D #8-32 UNC-2A G F E MAXIMUM	Advanced Semiconductor

HF75- Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HF75-12	NPN SILICON RF POWER TRANSISTOR HF75-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF75-12 is Designed for 12.5 Volt Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. FEATURES INCLUDE: • Replacement for MRF454 & SD1405 • PG = 18 dB Typical @ 30MHz & 75W • Withstands 20:1 Load V	Advanced Semiconductor
HF75-50S	NPN SILICON RF POWER TRANSISTOR HF75-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF75-50S is Designed for 50 Volt Class AB and Class C Power Amplifier Applications Operating in the 2 to 32 MHz HF Band. FEATURES INCLUDE: • Direct Replacement for TH513 • High Gain, 16 dB Typical @ 30 MHz • Withst	Advanced Semiconductor
HF75-50F	NPN SILICON RF POWER TRANSISTOR HF75-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF75-50F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: • PG = 14 dB min. at 75 W/30 MHz • IMD3 = 50 dBc max. at 75 W (PEP) • Omnigold™ Metalization System F E B C D E C E Ø.125 NOM	Advanced Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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