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Datasheet HF4N65 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 HF4N65   650V N-Channel MOSFET

HF4N65 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 2.0 A 2.5 -- Off Characteristics BVDSS ΔBVDSS /ΔT
 JINGJIAZHEN
JINGJIAZHEN		 datasheet HF4N65 pdf

HF4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
HF46F

SUBMINIATURE INTERMEDIATE POWER RELAY

20 }~ 0 :<,5363+;<9/ 36;/95/.3+;/ 87>/9 9/4+? 0C@MNKCL F`c Lf3? E689:6< = . / F`c Lf3? 9557:76: F`c Lf3? COC5=556579>87 S :A jn`kZ_`e^ ZXgXY`c`kp S 65bT `dglcj n`k_jkXe[ mfckX^ .Ykn\e Zf`c Xe[ ZfekXZkj/ S Rpg 7 d\kj TDE 5<551 5;86 i`e]fiZ `ejlcXk`fe S H`^
 Hongfa Technology
Hongfa Technology		 datasheet pdf - Hongfa Technology
HF46F-G

SUBMINIATURE INTERMEDIATE POWER RELAY

31 ~ *1 { 2 ;=-6474,<=:0 47<0:60/4,<0 98?0: :05,@ 1DANOLDM F`c Lf3? E689:6< > / 0 F`c Lf3? 9557:76: F`c Lf3? COC5=556579>87 T 65A jn`kZ_`e^ ZXgXY`c`kp T 65bT `dglcj n`k_jkXe[ mfckX^ .Ykn\e Zf`c Xe[ ZfekXZkj/ T Rpg 7 d\kj TDE 5<551 5;86 i`e]fiZ `ejlcXk`fe
Hongfa Technology
Hongfa Technology		 datasheet pdf - Hongfa Technology
HF4N65

650V N-Channel MOSFET

HF4N65 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 2.0 A 2.5 -- Off Characteristics
 JINGJIAZHEN
JINGJIAZHEN		 datasheet pdf - JINGJIAZHEN


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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