HF100-28
Advanced Semiconductor
NPN SILICON RF POWER TRANSISTORHF100-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF100-28 is a class A silicon NPN planar transistor, designed for SSB communications. Diffused ballasting provide High VSRW Capability under rated operating conditions.
PACKAGE STYLE .500 4L FLG
.
HF100-12
NPN SILICON RF POWER TRANSISTORHF100-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF100-12 is Designed for
PACKAGE STYLE .500 4L FLG
.112x45° A FULL R Ø.125 NOM. L
FEATURES:
• PG = 12 dB min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W (PEP) • Omnigold™ Metalization System
C B
E H
D G
F K
MAXIMUM RA
Advanced Semiconductor
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