HER103G
Won-Top Electronics
(HER101G - HER108G) 1.0A GLASS PASSIVATED ULTRAFAST DIODE
WTE
POWER SEMICONDUCTORS
HER101G – HER108G
Pb
1.0A GLASS PASSIVATED ULTRAFAST DIODE
Features
! ! ! ! ! Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A
HER103G
American First Semiconductor
(HER101G - HER108G) 1.0A Leaded Type High Effciency RectifiersSilicon Rectifier
HER101G THRU HER108G
1.0A Leaded Type High Effciency Rectifiers - 50V-1000V
Features
• Axial lead type devices for through hole design. • High current capability. • Ultrafast recovery time for high efficiency. • High surge current c
HER103G
SIYU
(HER101G - HER108G) Plastic High-Efficiency RectifiersSIYU R
塑封高效率整流二极管
反向电压 50 ---1000 V 正向电流 1.0 A
HER101G ...... HER108G
Plastic High-Efficiency Rectifiers
Reverse Voltage 50 to 1000V Forward Current 1.0A 特征 Features
·玻钝芯片 Glass passivated chip ·反向漏电�
HER103G
Jinan Gude Electronic Device
1.0 AMP. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERSMCC
Features
• • • • High Surge Current Capability High Reliability Low Forward Voltage Drop High Current Capability
omponents 21201 Itasca Street Chatsworth !"# $
% !"#
HER101S THRU HER10
HER103G
SeCoS
Glass Passivated High Efficiency RectifiersElektronische Bauelemente
HER101G ~ HER107G
VOLTAGE 50 ~ 1000 V 1 A, Glass Passivated High Efficiency Rectifiers
FEATURES
z Low forward voltage drop z High current capability z High reliability z High surge current capability z High speed switching
RoHS Com
HER103G
Taiwan Semiconductor
Glass Passivated High Efficient RectifiersHER101G thru HER108G
Taiwan Semiconductor
CREAT BY ART
Glass Passivated High Efficient Rectifiers
FEATURES
- Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability
- Compliant to RoHS Directive 2011/