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Product Bulletin HCT802 September 1996 Dual Enhancement Mode MOSFET Types HCT802, HCT802TX, HCT802TXV Features • 6 pad surface mount package • VDS = 90V • RDS(on) <5Ω • ID(on) N-Channel = 1.5A P-Channel = 1.1A • Two devices selected for VDS, ID(on) and RDS(on) similarity • Full TX Pro
Dual Enhancement Mode MOSFET HCT802, HCT802TX, HCT802TXV Features: 6 pad surface mount package VDS = 90V RDS(on) < 5Ω ID(on) N-Channel = 1.5A | P-Channel = 1.1A Two devices selected for VDS ID(on) and RDS(on) similarity Full TX Processing Available
Product Bulletin HCT802 September 1996 Dual Enhancement Mode MOSFET Types HCT802, HCT802TX, HCT802TXV Features • 6 pad surface mount package • VDS = 90V • RDS(on) <5Ω • ID(on) N-Channel = 1.5A P-Channel = 1.1A • Two devices selected for VDS, ID(on) and RDS(on) similarity • Full TX Pro
Dual Enhancement Mode MOSFET HCT802, HCT802TX, HCT802TXV Features: 6 pad surface mount package VDS = 90V RDS(on) < 5Ω ID(on) N-Channel = 1.5A | P-Channel = 1.1A Two devices selected for VDS ID(on) and RDS(on) similarity Full TX Processing Available
Dual Enhancement Mode MOSFET HCT802, HCT802TX, HCT802TXV Features: 6 pad surface mount package VDS = 90V RDS(on) < 5Ω ID(on) N-Channel = 1.5A | P-Channel = 1.1A Two devices selected for VDS ID(on) and RDS(on) similarity Full TX Processing Available
N-Channel Enhancement Mode MOS Transistor HCT7000M, HCT70000MTX, HCT7000MTXV Features: 200 mA ID Ultra small surface mount package RDS(ON) < 5Ω Pin-out compatible with most SOT23 MOSFETS Description: The HCT7000M is a high performance enhancement mode N‐channe
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