|
|
Datasheet HBR3060ZR Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | HBR3060ZR | SCHOTTKY BARRIER DIODE 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE
HBR3060
主要参数 MAIN CHARACTERISTICS
封装 Package
IF(AV) VRRM Tj VF(max)
30(2×15) A 60 V 175 ℃
0.68V (@Tj=125℃)
用途
z 高频开关电源 z 低压续流电路和保护电
路
APPLICATIONS
z High frequency switch power supp | Jilin Sino | diode |
HBR Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | HBR10100 | SCHOTTKY BARRIER DIODE 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE
HBR10100
主要参数 MAIN CHARACTERISTICS
封装 Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
100 V 175 ℃ 0.7V (@Tj=125℃)
用途
z 高频开关电源 z 低压续流电路和保护电
路
APPLICATIONS
z High frequency switch power suppl Jilin Sino diode | | |
2 | HBR10100BF | SCHOTTKY BARRIER DIODE 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE
HBR10100
主要参数 MAIN CHARACTERISTICS
封装 Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
100 V 175 ℃ 0.7V (@Tj=125℃)
用途
z 高频开关电源 z 低压续流电路和保护电
路
APPLICATIONS
z High frequency switch power suppl Jilin Sino diode | | |
3 | HBR10100BFR | SCHOTTKY BARRIER DIODE 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE
HBR10100
主要参数 MAIN CHARACTERISTICS
封装 Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
100 V 175 ℃ 0.7V (@Tj=125℃)
用途
z 高频开关电源 z 低压续流电路和保护电
路
APPLICATIONS
z High frequency switch power suppl Jilin Sino diode | | |
4 | HBR10100CT | Schottky Barrier Rectifier, Diode Schottky Barrier Rectifier
FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection,High reliability ·100% avalanche tested ·RoHS product ·Minimum Lot-to-Lot variations for robust device
performance and reli Inchange Semiconductor rectifier | | |
5 | HBR10100F | SCHOTTKY BARRIER DIODE 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE
HBR10100
主要参数 MAIN CHARACTERISTICS
封装 Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
100 V 175 ℃ 0.7V (@Tj=125℃)
用途
z 高频开关电源 z 低压续流电路和保护电
路
APPLICATIONS
z High frequency switch power suppl Jilin Sino diode | | |
6 | HBR10100FR | SCHOTTKY BARRIER DIODE 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE
HBR10100
主要参数 MAIN CHARACTERISTICS
封装 Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
100 V 175 ℃ 0.7V (@Tj=125℃)
用途
z 高频开关电源 z 低压续流电路和保护电
路
APPLICATIONS
z High frequency switch power suppl Jilin Sino diode | | |
7 | HBR10100HF | SCHOTTKY BARRIER DIODE 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE
HBR10100
主要参数 MAIN CHARACTERISTICS
封装 Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
100 V 175 ℃ 0.7V (@Tj=125℃)
用途
z 高频开关电源 z 低压续流电路和保护电
路
APPLICATIONS
z High frequency switch power suppl Jilin Sino diode | |
Esta página es del resultado de búsqueda del HBR3060ZR. Si pulsa el resultado de búsqueda de HBR3060ZR se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |