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HBR10200 전자부품 데이터시트



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HBR10200  

Jilin Sino
Jilin Sino

HBR10200

SCHOTTKY BARRIER DIODE

肖特基势垒二极管 R SCHOTTKY BARRIER DIODE HBR10200 主要参数 MAIN CHARACTERISTICS 封装 Package IF(AV) VRRM Tj VF(max) 10(2×5)A 200 V 175 ℃ 0.75V (@Tj=125℃) 用途 z 高频开关电源 z 低压续流电路和保护电 路 APPLICA



HBR10200  

Inchange Semiconductor
Inchange Semiconductor

HBR10200

Schottky Barrier Rectifier ( Diode )

Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection,High reliability ·100% avalanche tested ·RoHS product ·Minimum Lot-to-Lot variation



HBR10200C  

Jilin Sino
Jilin Sino

HBR10200C

SCHOTTKY BARRIER DIODE

肖特基势垒二极管 R SCHOTTKY BARRIER DIODE HBR10200 主要参数 MAIN CHARACTERISTICS 封装 Package IF(AV) VRRM Tj VF(max) 10(2×5)A 200 V 175 ℃ 0.75V (@Tj=125℃) 用途 z 高频开关电源 z 低压续流电路和保护电 路 APPLICA



HBR10200CR  

Jilin Sino
Jilin Sino

HBR10200CR

SCHOTTKY BARRIER DIODE

肖特基势垒二极管 R SCHOTTKY BARRIER DIODE HBR10200 主要参数 MAIN CHARACTERISTICS 封装 Package IF(AV) VRRM Tj VF(max) 10(2×5)A 200 V 175 ℃ 0.75V (@Tj=125℃) 用途 z 高频开关电源 z 低压续流电路和保护电 路 APPLICA



HBR10200CT  

Inchange Semiconductor
Inchange Semiconductor

HBR10200CT

Schottky Barrier Rectifier ( Diode )

Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection,High reliability ·100% avalanche tested ·RoHS product ·Minimum Lot-to-Lot variation



HBR10200F  

Jilin Sino
Jilin Sino

HBR10200F

SCHOTTKY BARRIER DIODE

肖特基势垒二极管 R SCHOTTKY BARRIER DIODE HBR10200 主要参数 MAIN CHARACTERISTICS 封装 Package IF(AV) VRRM Tj VF(max) 10(2×5)A 200 V 175 ℃ 0.75V (@Tj=125℃) 用途 z 高频开关电源 z 低压续流电路和保护电 路 APPLICA



HBR10200FR  

Jilin Sino
Jilin Sino

HBR10200FR

SCHOTTKY BARRIER DIODE

肖特基势垒二极管 R SCHOTTKY BARRIER DIODE HBR10200 主要参数 MAIN CHARACTERISTICS 封装 Package IF(AV) VRRM Tj VF(max) 10(2×5)A 200 V 175 ℃ 0.75V (@Tj=125℃) 用途 z 高频开关电源 z 低压续流电路和保护电 路 APPLICA



HBR10200HF  

Jilin Sino
Jilin Sino

HBR10200HF

SCHOTTKY BARRIER DIODE

肖特基势垒二极管 R SCHOTTKY BARRIER DIODE HBR10200 主要参数 MAIN CHARACTERISTICS 封装 Package IF(AV) VRRM Tj VF(max) 10(2×5)A 200 V 175 ℃ 0.75V (@Tj=125℃) 用途 z 高频开关电源 z 低压续流电路和保护电 路 APPLICA



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