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HAT2279N  

Renesas Technology
Renesas Technology

HAT2279N

Silicon N Channel Power MOS FET Power Switching

HAT2279N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.2.00 Jul.05.2005 Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 9.




관련 부품 HAT227 상세설명

HAT2279H  

  
Silicon N Channel Power MOS FET Power Switching

HAT2279H Silicon N Channel Power MOS FET Power Switching REJ03G1464-0200 Rev.2.00 Jul 05, 2006 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.5 mΩ typ. (at VGS = 10 V) • Lead Free • • •



Renesas Technology
Renesas Technology

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