HAT2279N
Renesas Technology
Silicon N Channel Power MOS FET Power Switching
HAT2279N
Silicon N Channel Power MOS FET Power Switching
Preliminary Rev.2.00 Jul.05.2005
Features
• High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 9.
HAT2279H
Silicon N Channel Power MOS FET Power Switching
HAT2279H
Silicon N Channel Power MOS FET Power Switching
REJ03G1464-0200 Rev.2.00 Jul 05, 2006
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.5 mΩ typ. (at VGS = 10 V) • Lead Free • • •
Renesas Technology
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