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Datasheet HAT2210R Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
2 HAT2210R   Silicon N Channel Power MOS FET

HAT2210R, HAT2210RJ Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G0578-0300 Rev.3.00 Mar.15.2005 Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode Outline
Renesas Technology
Renesas Technology
datasheet HAT2210R pdf
1 HAT2210RJ   Silicon N Channel Power MOS FET

HAT2210R, HAT2210RJ Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G0578-0300 Rev.3.00 Mar.15.2005 Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode Outline
Renesas Technology
Renesas Technology
datasheet HAT2210RJ pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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