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HAT2208R Silicon N Channel Power MOS FET Power Switching REJ03G1595-0200 Rev.2.00 Oct 15, 2007 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 19.0 mΩ typ. (at VGS = 10 V) Outli
HAT2207C Silicon N Channel MOS FET Power Switching REJ03G1239-0600 Rev.6.00 Feb 28, 2006 Features • Low on-resistance RDS(on) = 100 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 2.5 V gate drive devices. Outline RENESAS Package code: PWSF000
HAT2205C Silicon N Channel MOS FET Power Switching REJ03G1237-0400 Rev.4.00 Jan 26, 2006 Features • Low on-resistance RDS (on) = 38 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 1.8 V gate drive devices. Outline RENESAS Package code: PWSF000
HAT2204C Silicon N Channel MOS FET Power Switching REJ03G0448-0500 Rev.5.00 May 10, 2007 Features • Low on-resistance RDS(on) = 26m Ω typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 1.8 V gate drive device Outline RENESAS Package code: PWSF0006JA-A
HAT2203C Silicon N Channel MOS FET Power Switching REJ03G0447-0400 Rev.4.00 May 19.2005 Features • Low on-resistance RDS(on) = 69 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A
HAT2201WP Silicon N Channel Power MOS FET Power Switching REJ03G1679-0300 Rev.3.00 May 27, 2008 Features • • • • Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 34 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PWS
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