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HAT2200R 전자부품 데이터시트



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HAT2200R  

Renesas Technology
Renesas Technology

HAT2200R

Silicon N Channel Power MOS FET Power Switching

HAT2200R Silicon N Channel Power MOS FET Power Switching REJ03G0232-0200Z Rev.2.00 Apr.05.2004 Features • • • • Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 22 mΩ typ. (at VGS = 1




관련 부품 HAT220 상세설명

HAT2208R  

  
Silicon N Channel Power MOS FET Power Switching

HAT2208R Silicon N Channel Power MOS FET Power Switching REJ03G1595-0200 Rev.2.00 Oct 15, 2007 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 19.0 mΩ typ. (at VGS = 10 V) Outli



Renesas Technology
Renesas Technology

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HAT2207C  

  
Silicon N Channel Power MOS FET Power Switching

HAT2207C Silicon N Channel MOS FET Power Switching REJ03G1239-0600 Rev.6.00 Feb 28, 2006 Features • Low on-resistance RDS(on) = 100 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 2.5 V gate drive devices. Outline RENESAS Package code: PWSF000



Renesas Technology
Renesas Technology

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HAT2206C  

  
Silicon N Channel Power MOS FET Power Switching

HAT2206C Silicon N Channel MOS FET Power Switching REJ03G1238-0500 Rev.5.00 Jan 26, 2006 Features • Low on-resistance RDS (on) = 65 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 1.8 V gate drive devices. Outline RENESAS Package code: PWSF000



Renesas Technology
Renesas Technology

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HAT2205C  

  
Silicon N Channel Power MOS FET Power Switching

HAT2205C Silicon N Channel MOS FET Power Switching REJ03G1237-0400 Rev.4.00 Jan 26, 2006 Features • Low on-resistance RDS (on) = 38 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 1.8 V gate drive devices. Outline RENESAS Package code: PWSF000



Renesas Technology
Renesas Technology

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HAT2204C  

  
Silicon N Channel MOS FET Power Switching

HAT2204C Silicon N Channel MOS FET Power Switching REJ03G0448-0500 Rev.5.00 May 10, 2007 Features • Low on-resistance RDS(on) = 26m Ω typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 1.8 V gate drive device Outline RENESAS Package code: PWSF0006JA-A



Renesas Technology
Renesas Technology

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HAT2203C  

  
Silicon N Channel Power MOS FET Power Switching

HAT2203C Silicon N Channel MOS FET Power Switching REJ03G0447-0400 Rev.4.00 May 19.2005 Features • Low on-resistance RDS(on) = 69 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A



Renesas Technology
Renesas Technology

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