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HAT2199R Silicon N Channel Power MOS FET Power Switching REJ03G0063-0300 Rev.3.00 Sep.23.2004 Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 13.0 mΩ typ. (at VGS = 10 V) Outline
HAT2197R Silicon N Channel Power MOS FET Power Switching REJ03G0061-0200Z Rev.2.00 Apr.02.2004 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 mΩ typ. (at VGS = 10 V) Outli
HAT2196C Silicon N Channel MOS FET Power Switching REJ03G1235-0500 Rev.5.00 Jun. 13, 2005 Features • Low on-resistance RDS(on) = 45 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 2.5 V gate drive devices. Outline RENESAS Package code: PWSF0006
HAT2193WP Silicon N Channel Power MOS FET Power Switching REJ03G1252-0100 Rev.1.00 Aug.24,2005 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 G 1, 2, 3 So
HAT2191WP Silicon N Channel Power MOS FET Power Switching REJ03G1223-0500 Rev.5.00 Jun.02.2005 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 G 1, 2, 3 So
HAT2192WP Silicon N Channel Power MOS FET Power Switching REJ03G0533-0100 Rev.1.00 Feb.23.2005 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 G 1, 2, 3 So
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