|
HAT2179R
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1570-0100 Rev.1.00 Jul 06, 2007
Features
• Low on-resistance • Low drive current • High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8
HAT2175H Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 33 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123
HAT2174H Silicon N Channel Power MOS FET Power Switching REJ03G0041-0400 Rev.4.00 Dec 11, 2006 Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 21 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0
HAT2171H Silicon N Channel Power MOS FET Power Switching REJ03G0131-0400 Rev.4.00 Sep 20, 2005 Features • • • • • High speed switching Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.8 mΩ typ. (at VGS = 10 V) Outline
HAT2170H Silicon N Channel MOS FET Power Switching REJ03G0121-0500 Rev.5.00 Sep 26, 2005 Features • • • • • High speed switching Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.3 mΩ typ. (at VGS = 10 V) Outline RENESA
HAT2173N Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 12.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i) 1(S) 2(S) 3(S) 4(G) 2X
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |