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HAT2172H 전자부품 데이터시트



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HAT2172H  

Renesas Technology
Renesas Technology

HAT2172H

Silicon N Channel Power MOS FET Power Switching

HAT2172H Silicon N Channel Power MOS FET Power Switching REJ03G0132-0400Z Rev.4.00 Oct.29.2003 Features • • • • • High speed switching Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS(on) =




관련 부품 HAT217 상세설명

HAT2179R  

  
Silicon N Channel MOS FET High Speed Power Switching

HAT2179R Silicon N Channel MOS FET High Speed Power Switching REJ03G1570-0100 Rev.1.00 Jul 06, 2007 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 5 76 34 4 G 5 6 7 8 D D



Renesas Technology
Renesas Technology

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HAT2175H  

  
Silicon N Channel Power MOS FET

HAT2175H Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 33 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123



Renesas Technology
Renesas Technology

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HAT2174H  

  
Silicon N Channel Power MOS FET Power Switching

HAT2174H Silicon N Channel Power MOS FET Power Switching REJ03G0041-0400 Rev.4.00 Dec 11, 2006 Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 21 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0



Renesas Technology
Renesas Technology

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HAT2173H  

  
Silicon N Channel Power MOS FET Power Switching

HAT2173H Silicon N Channel Power MOS FET Power Switching REJ03G0030-0200 Rev.2.00 Sep 26, 2005 Features • • • • • High speed switching Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 12 mΩ typ. (at VGS = 10 V) Outline R



Renesas Technology
Renesas Technology

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HAT2171H  

  
Silicon N Channel Power MOS FET Power Switching

HAT2171H Silicon N Channel Power MOS FET Power Switching REJ03G0131-0400 Rev.4.00 Sep 20, 2005 Features • • • • • High speed switching Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.8 mΩ typ. (at VGS = 10 V) Outline



Renesas Technology
Renesas Technology

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HAT2170H  

  
Silicon N Channel MOSFET Power Switching

HAT2170H Silicon N Channel MOS FET Power Switching REJ03G0121-0500 Rev.5.00 Sep 26, 2005 Features • • • • • High speed switching Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.3 mΩ typ. (at VGS = 10 V) Outline RENESA



Renesas Technology
Renesas Technology

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