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HAT2166H Silicon N Channel Power MOS FET Power Switching REJ03G0005-0500Z Rev.5.00 Apr.09.2003 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 mΩ typ. (at VGS = 10 V) Outline LFPAK www.DataSheet
HAT2165N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.0.01 Jul.15.2004 Features • Capable • High speed switching of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.8 mΩ typ. (at VGS = 10 V) Outline LFP
HAT2169N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.0.01 May.29.2005 Features • Capable • High speed switching of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 3.1 mΩ typ. (at VGS = 10 V) Outline LFP
HAT2169H Silicon N Channel Power MOS FET Power Switching REJ03G0119-0400 Rev.4.00 Sep 20, 2005 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 mΩ typ. (at VGS = 10 V) Outline RENESAS Package cod
HAT2160H Silicon N Channel Power MOS FET Power Switching REJ03G0002-0300 Rev.3.00 Sep 26, 2005 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.1 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: P
HAT2168H Silicon N Channel Power MOS FET Power Switching REJ03G0046-0600Z Rev.6.00 Jun.02.2003 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 mΩ typ. (at VGS = 10 V) Outline LFPAK 5 5 D 3 1 2
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