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HAT2164H 전자부품 데이터시트



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HAT2164H  

Renesas Technology
Renesas Technology

HAT2164H

Silicon N Channel Power MOS FET Power Switching

HAT2164H Silicon N Channel Power MOS FET Power Switching REJ03G0003-0400Z Rev.4.00 Apr.09.2003 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.5 mΩ typ. (at VGS = 10 V) Outline LFPA




관련 부품 HAT216 상세설명

HAT2166H  

  
Silicon N Channel Power MOS FET Power Switching

HAT2166H Silicon N Channel Power MOS FET Power Switching REJ03G0005-0500Z Rev.5.00 Apr.09.2003 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 mΩ typ. (at VGS = 10 V) Outline LFPAK www.DataSheet



Renesas Technology
Renesas Technology

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HAT2165N  

  
Silicon N Channel Power MOS FET Power Switching

HAT2165N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.0.01 Jul.15.2004 Features • Capable • High speed switching of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.8 mΩ typ. (at VGS = 10 V) Outline LFP



Renesas Technology
Renesas Technology

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HAT2169N  

  
Silicon N Channel Power MOS FET Power Switching

HAT2169N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.0.01 May.29.2005 Features • Capable • High speed switching of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 3.1 mΩ typ. (at VGS = 10 V) Outline LFP



Renesas Technology
Renesas Technology

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HAT2169H  

  
Silicon N Channel Power MOS FET Power Switching

HAT2169H Silicon N Channel Power MOS FET Power Switching REJ03G0119-0400 Rev.4.00 Sep 20, 2005 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 mΩ typ. (at VGS = 10 V) Outline RENESAS Package cod



Renesas Technology
Renesas Technology

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HAT2160H  

  
Silicon N-Channel Power MOS FET Power Switching

HAT2160H Silicon N Channel Power MOS FET Power Switching REJ03G0002-0300 Rev.3.00 Sep 26, 2005 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.1 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: P



Renesas Technology
Renesas Technology

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HAT2168H  

  
Silicon N Channel Power MOS FET Power Switching

HAT2168H Silicon N Channel Power MOS FET Power Switching REJ03G0046-0600Z Rev.6.00 Jun.02.2003 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 mΩ typ. (at VGS = 10 V) Outline LFPAK 5 5 D 3 1 2



Renesas Technology
Renesas Technology

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