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HAT2139H Silicon N Channel Power MOS FET Power Switching REJ03G0055-0500 Rev.5.00 Sep 20, 2005 Features • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 9 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ00
HAT2132H Silicon N Channel MOS FET High Speed Power Switching REJ03G0177-0300 Rev.3.00 Dec 07, 2006 Features • Low drive current. • Low on-resistance • Low profile Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK ) 5 D 5 4 4 G 3 12 1, 2, 3 4 5 Source Gat
HAT2131R
Silicon N Channel Power MOS FET Power Switching
Features
• Low on-resistance • Low drive current • High density mounting • Capable of 4 V gate drive
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8
HAT2134H Silicon N Channel Power MOS FET Power Switching REJ03G1190-0300 (Previous: ADE-208-1578A) Rev.3.00 Sep 07, 2005 Features • Low • Capable of 4.5 V gate drive drive current • High density mounting • Low on-resistance RDS (on) = 2.3 mΩ typ. (at VGS = 10 V) Outl
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