Datasheet HAT2126RP Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HAT2126RP	Silicon N Channel Power MOS FET Power Switching To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i	Renesas Technology

HAT212 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HAT2129H	Silicon N Channel Power MOS FET Power Switching HAT2129H Silicon N Channel Power MOS FET Power Switching REJ03G0049-0500 Rev.5.00 Sep 20, 2005 Features • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6 mΩ typ. (at VGS = 10 V) Outline RENESAS	Renesas Technology
HAT2126RP	Silicon N Channel Power MOS FET Power Switching To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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