HAT2119H
Renesas Technology
Silicon N Channel Power MOS FET Power SwitchingHAT2119H
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0176-0300 Rev.3.00 Dec 19, 2006
Features
• Low drive current. • Low on-resistance • Low profile
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK )
5
HAT2116H
Silicon N Channel Power MOS FET Power SwitchingHAT2116H
Silicon N Channel Power MOS FET Power Switching
REJ03G1189-0400 (Previous: ADE-208-1575B) Rev.4.00 Sep 07, 2005
Features
• Low
• Capable of 4.5 V gate drive drive current • High density mounting • Low on-resistance RDS (on) = 6.3 mΩ typ. (at VGS = 10 V)
Outl
Renesas Technology
PDF
HAT2114R
Silicon N Channel Power MOS FET High Speed Power Switching
HAT2114R, HAT2114RJ
Silicon N Channel Power MOS FET High Speed Power Switching
REJ03G0120-0100Z (Previous ADE-208-1544(Z)) Rev.1.00 Oct.06.2003
Features
• • • • Low on-resistance Capable of 4.5V gate drive High density mounting “J” is for Automotive application High
Renesas Technology
PDF
HAT2114RJ
Silicon N Channel Power MOS FET High Speed Power Switching
HAT2114R, HAT2114RJ
Silicon N Channel Power MOS FET High Speed Power Switching
REJ03G0120-0100Z (Previous ADE-208-1544(Z)) Rev.1.00 Oct.06.2003
Features
• • • • Low on-resistance Capable of 4.5V gate drive High density mounting “J” is for Automotive application High
Renesas Technology
PDF