Datasheet HAT1108C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HAT1108C	Silicon P Channel Power MOS FET Power Switching HAT1108C Silicon P Channel MOS FET Power Switching REJ03G1234-0500 Rev.5.00 Aug 30, 2006 Features • Low on-resistance RDS(on) = 155 mΩ typ. (at VGS = –10 V) • Low drive current. • 4.5 V gate drive devices. • High density mounting Outline RENESAS Package code: PWSF00	Renesas Technology

HAT11 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HAT1127H	Silicon P Channel Power MOS FET Power Switching HAT1127H Silicon P Channel Power MOS FET Power Switching REJ03G1330-0500 Rev.5.00 Jan 20, 2006 Features • Capable of –4.5 V gate drive • Low drive current • High density mounting • Ultra Low on-resistance RDS(on) = 3.6 mΩ typ. (at VGS = –10 V)	Renesas Technology
HAT1126R	Silicon P Channel Power MOS FET Power Switching HAT1126R, HAT1126RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0406-0100 Rev.1.00 Sep.10.2004 Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting • “J” is for Automotive application High tempera	Renesas Technology
HAT1111C	Silicon P Channel Power MOS FET Power Switching HAT1111C Silicon P Channel MOS FET Power Switching REJ03G0446-0600 Rev.6.00 May 19.2005 Features • Low on-resistance RDS(on) = 245 mΩ typ. (at VGS = –10 V) • Low drive current. • 4.5 V gate drive devices. • High density mounting Outline RENESAS P	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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