HAT1097RJ
Renesas Technology
Silicon P Channel Power MOS FET Power SwitchingHAT1097R, HAT1097RJ
Silicon P Channel Power MOS FET High Speed Power Switching
REJ03G0529-0100 Rev.1.00 Feb.15.2005
Features
• Low on-resistance • Capable of 4.5 V gate drive • High density mounting • “J” is for Automotive appl
HAT1097R
Silicon P Channel Power MOS FET Power SwitchingHAT1097R, HAT1097RJ
Silicon P Channel Power MOS FET High Speed Power Switching
REJ03G0529-0100 Rev.1.00 Feb.15.2005
Features
• Low on-resistance • Capable of 4.5 V gate drive • High density mounting • “J” is for Automotive application High temperature D-S leakage gua
Renesas Technology
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